dm t5015lf d f advanced information 50v n - channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = + 25c 5 0 v 15 m ? ? description and applications this mosfet is designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? load switch ? adaptor switch ? notebook pc features ? 0. 6 mm p rofile ? i deal for l ow p rofile a pplications ? pcb f ootprint of 4mm 2 ? low gate threshold voltage ? fast switching speed ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. ?green? device (note 3 ) mechanical data ? case: u - dfn2020 - 6 ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish ? nipdau over copper l eadframe . solderable per mil - std - 202, method 208 ? ordering information (note 4 ) part number marking reel size (inches) quantity per reel dm t5015l fd f - 7 t5 7 3,000 dm t5015l fd f - 13 t5 13 10 ,000 note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporated?s definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging details, go to our website at http://www.diodes.com /products/packages.html . marking information date code key year 2014 2015 201 6 201 7 201 8 201 9 20 20 code b c d e f g h month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d pin out internal schematic t5 = product type marking code ym = date code marking y = year (ex: a = 201 4 ) m = month (ex: 9 = september) u - dfn2020 - 6 bottom view t5 y m bottom view top view d s g e4 dm t5015l fd f d atasheet number: d s37202 rev. 4 - 2 1 of 6 www.diodes.com september 2014 ? diodes incorporated
dm t5015lf d f advanced information maximum ratings ( @t a = + 25c , unless otherwise specified .) characteristic symbol value units drain - source voltage v dss 50 v gate - source voltage v gss 16 v continuous drain current (note 6 ) v gs = 10v steady state t a = + 25c t a = + 70c i d 9. 1 7. 3 a t< 10s t a = + 25c t a = + 70c i d 11.5 9.2 a pulsed drain curren t ( 10 thermal characteristics characteristic symbol value units total power dissipation (note 5) t a = +25c p d 0. 82 w t a = +70c 0. 52 thermal resistance, junction to ambient (note 5) s teady state r ja 153 c/w t<10s 96 total power dissipation (note 6 ) t a = +25c p d 1.9 7 w t a = +70c 1.2 thermal resistance, junction to ambient (note 6 ) s teady state r ja 67 c/w t<10s 42 thermal resistance, junction to case (note 6 ) s teady state r electrical characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics ( note 8 ) drain - source breakdown voltage bv dss 50 ? ? v v gs = 0v, i d = 250 a on characteristics ( note 8 ) gate threshold voltage v gs(th) 0. 5 ? 2 . 0 v v ds = v gs , i d = 250 a ? v gs = 10 v, i d = 8 a ? 23 v gs = 4.5 v, i d = 6 a diode forward voltage v sd ? 0.7 1.0 v v gs = 0v, i s = 5 a dynamic characteristic s (note 9 ) input capacitance c iss ? 902.7 ? pf v ds = 25 v, v gs = 0v , f = 1.0mhz output capacitance c oss ? 301.4 ? reverse transfer capacitance c rss ? 15.2 ? gate resistance r g ? 1.9 ? , i d = 8 a turn - on rise time t r ? 5.1 ? turn - off delay time t d(off) ? 10.6 ? turn - off fall time t f ? 2.7 ? reverse recovery time t rr ? 18.9 ? ns i f = 8 a, di/dt = 1 00a/ www.diodes.com september 2014 ? diodes incorporated
dm t5015lf d f advanced information v , drain-source voltage (v) figure 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d 0.0 3.0 6.0 9.0 12.0 15.0 18.0 21.0 24.0 27.0 30.0 0 1 2 3 4 5 v = 2.5v gs v = 3.0v gs v = 10v gs v = 4.5v gs v = 4.0v gs v = 3.5v gs v , gate-source voltage (v) gs figure 2 typical transfer characteristics i , d r a i n c u r r e n t ( a ) d 0 3 6 9 12 v = 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a 15 18 21 24 27 30 1 1.5 2 2.5 3 3.5 4 i , drain-source current (a) d figure 3 typical on-resistance vs. drain current and gate voltage r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? ? r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 v = 4.5v i = 6a gs d v =v i = 8a gs d 10 t , junction temperature ( c) figure 6 on-resistance variation with temperature j r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? www.diodes.com september 2014 ? diodes incorporated
dm t5015lf d f advanced information t , junction temperature ( c) figure 7 gate threshold variation vs. ambient temperature j v , g a t e t h r es h o l d v o l t ag e (v) g s ( t h ) 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -50 -25 0 25 50 75 100 125 150 i = 1ma d i = 250a d v , source-drain voltage (v) sd figure 8 diode forward voltage vs. current i , s o u r c e c u r r e n t ( a ) s t = 150c a 0 3 6 9 12 15 18 21 24 27 30 0 0.3 0.6 0.9 1.2 1.5 t = 125c a t = 25c a t = -55c a t = 85c a v , drain-source voltage (v) ds figure 9 typical drain-source leakage current vs. voltage i , d r a i n l e a k a g e c u r r e n t ( n a ) d s s 0.1 1 10 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 45 50 t = 25c a t = 85c a t = 125c a t = 150c a v , drain-source voltage (v) ds figure 10 typical junction capacitance c , j u n c t i o n c a p a c i t a n c e ( p f ) t 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c iss c oss c rss f = 1mhz q (nc) g , total gate charge figure 11 gate charge v g a t e t h r e sh o l d vo l t ag e (v) g s 0 2 4 6 8 10 0 3 6 9 12 15 v = 25v i=a ds d 8 v , drain-source voltage (v) figure 12 soa, safe operation area ds i , d r a i n c u r r e n t ( a ) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w t = 150c t = 25c v = 10v single pulse j(max) a gs dut on 1 * mrp board p = 100s w 0.001 0.01 0.1 1 10 100 0.01 0.1 1 10 100 dm t5015l fd f d atasheet number: d s37202 rev. 4 - 2 4 of 6 www.diodes.com september 2014 ? diodes incorporated
dm t5015lf d f advanced information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. u - dfn2020 - 6 (type f) t1, pulse duration time (sec) figure 13 transient thermal resistance r(t ), t r an si en t t h er m al r esi s t a n c e d = 0.5 d = 0.7 d = 0.9 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r (t) = r(t) * r r = 153c/w duty cycle, d = t1/ t2 ? ja ja ja 0.001 0.01 0.1 1 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 u - dfn2020 - 6 (type f) dim min max typ a 0.57 a1 0 0.05 0.0 3 a3 - - 0.15 b 0.2 5 0.3 5 0. 30 d 1. 95 2.05 2.00 d2 0.85 1. 05 0.95 d 3 0.33 0.43 0.38 e 0. 65 bsc e2 0. 863 bsc e 1.95 2.05 2.00 e2 1.05 1.25 1.15 e 3 0.65 0.75 0.70 l 0. 225 0. 32 5 0. 275 z 0.20 bsc z1 0.110 bsc all dimensions in mm dimensions value (in mm) c 0.650 x 0.400 x1 0.480 x2 0.950 x3 1.700 y 0.425 y1 0.800 y2 1.150 y3 1.450 y4 2.300 d d2 e e b l e2 a a3 seating plane a1 z( 4x) e2 e3 d3 z1 pin1 y4 y2 y x c x3 y1 x1 x2 y3 dm t5015l fd f d atasheet number: d s37202 rev. 4 - 2 5 of 6 www.diodes.com september 2014 ? diodes incorporated
dm t5015lf d f advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of t his document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application , customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or fore ign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorp orated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safe ty - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes in corporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 2014, diodes incorporated www.diodes.com dm t5015l fd f d atasheet number: d s37202 rev. 4 - 2 6 of 6 www.diodes.com september 2014 ? diodes incorporated
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